SiC Wafer
Silicon Carbide wafer is a wide bandgap semiconductor material suited for devices requiring higher performance in harsher environment. Some of the ideal applications include next generation ecofriendly vehicles, and generation to distribution of renewable energy.
Applications by Prime Grade
| Portfolio | Features & Benefits | Typical Applications |
|---|---|---|
| Prime Standard | Guaranteed MPD tolerances. Balances performance and cost for electronic components with low to medium current ratings. | Schottky and junction barrier Schottky diodes |
| Prime Select | More stringent tolerances for MPD current ratings and TSD. Allows for manufacturing with mid-range current ratings. |
Pin diodes and switches |
| Prime Ultra | Extremely low MPD, TSD and BPD tolerances and tightened wafer resistivity. Ensures product quality and improves cost efficiency in manufacturing high current devices. | High current and voltage MOSFETs, JFETs, IGBTs, BJTs and pin diodes with large die ares |
Material Properties
Refer to product data sheet for complete property summary
| Product metric | Standard | Select | Ultra |
|---|---|---|---|
| Diameter, mm | 14938 – 150.2 | ||
| Thickness, ㎛ | 325 – 375 | ||
| Primary flat length, mm | 45 – 50 | ||
| Bow, ㎛ | ± 30 | ||
| Warp, ㎛ | ≤ 50 | ||
| TTV, ㎛ | ≤ 10 | ||
| SBIR, ㎛ | ≤ 5 | ||
| Foreign polytypes, % | 0 | ||
| Visible scratches, mm | ≤ 40 | ||
| Resistivity, ohm-cm | 0.014 – 0.024 | 0.014 – 0.023 | 0.014 – 0.022 |
| Total usable area, % | ≥ 90 | ≥ 95 | ≥ 97 |
| Dislocation density, cm-2 | |||
| EPD (mean) | ≤ 15,000 | ≤ 12,000 | ≤ 9,000 |
| TED (mean) | ≤ 10,000 | ≤ 9,000 | ≤ 8,000 |
| TSD (mean) | ≤ 3,000 | ≤ 500 | ≤ 400 |
| BPD (mean) | ≤ 5,000 | ≤ 4,000 | ≤ 3,000 |
| MPD, cm-2 | ≤ 1 | ≤ 0.5 | ≤ 0.3 |