GaN Wafer
Gallium Nitride Wafer is a core material of next generation communication technology.
It is a next generation material optimized for cutting edge products, that are minimized, but still requires high-performance.
Based on its strengths of efficient power usage, lighter weight, and smaller size,
it continues to expand its usage in the 5G industry, artificial intelligence, wireless communications, aviation, and military areas.
| Specification | 100~150 mm | |||
|---|---|---|---|---|
| Conduction Type | Un-doped N-type |
N-type | High-doped N-type |
|
| Resistivity (Ω·cm) | 〈 0.5 | 〈 0.05 | 〈 0.01 | |
| Dislocation Density (cm-2) |
Grade A | 1×105 | ||
| Grade B | 1~5×106 | |||
| Grade C | 5×106 ~ 1×107 | |||
| Useable Surface Area | 〈 90% | |||