GaAs Wafer
Gallium Arsenide (GaAs) Wafer is a compound semiconductor material consisted of Gallium (Ga) and Arsenic (As).
It has high temperature stability, high frequency capability, and generates low noise.
It is used as a key material in many promising areas such as LED(VCSEL), laser, wireless communication, and solar panels.
Diameter: 100~150mm
| Specification | 100 mm | 150 mm | 200 mm |
|---|---|---|---|
| Growth Method | VGF / LEC | ||
| Conduction Type | Semi-insulating / Semi-conducting | ||
| Dopant | Si | ||
| EPD (cm-2) | 100 ~ 5,000 | ||
| Thickness (μm) | 525±25 | 625±25 | 725±25 |
| 675±25 | |||
| Warp (μm) | Max 10 | ||
| TTV (μm) | Max 5 | ||
| Front Side | Polished, Epi-ready | ||
| Back Side | Polished | ||