LN/LT Wafer

Lithium Niobate (LN) and Lithium Tantalate (LT) wafers are mainly used in optic devices and telecommunication equipment,
particularly for Surface Acoustic Wave filtering (SAW Filter).
With their excellent chemical and mechanical coupling, the demand is only going up,
especially due to ongoing expansion of next generation communication methods.

Diameter: 75~150mm

Specification LN(LiNbO3) Wafer LT(LiTaO3) Wafer
Material SAW Grade LiNbO3 Crystal SAW Grade LiTaO3 Crystal
Curie Temp 1142±2.0℃ 603±2℃
Cutting Angle X/Y/Z/Y36/Y41/Y64/Y128 etc X/X112Y/Y36/Y42/Y48 etc
Diameter 75 mm 100 mm 150 mm
Tol(±) 〈 0.20 mm
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22 mm 32 mm 42.5 mm
LTV (5mmx5mm) 〈 1µm
TTV 〈 3µm
Bow -30 〈 bow 〈 30
Warp 〈 40µm
PLTV(〈 0.5um) ≥ 95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished /Double Sides Polished

LN Wafer

LT Wafer

4-6 inch, 5-50 um

LT Thin Film

Silicon Substrate

POI (LNOI/LTOI) Wafer

We also supply Piezoelectric On Insulator wafers, LNOI and LTOI wafers, along with LN and LT wafers

LN / LT Thin Films (Standard & Customized)
Top Layer
/ Details		 Substrate Details Top Layer Thin Films Details
Multi-Layer
Structure		 Patterned
Electrode
& Waveguide		 Different Material
(SiO2/Si, Sapphire Quartz, SiC etc)		 PPLN Special Size Electrode
(Au, Pt, Cr, Al etc)		 Orientation
(Same as Bulk Wafers)		 Doped
(MgO, Fe, Er, Tm etc)
300-900 nm LiNbO3 ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
300-900 nm LiTaO3 ✓ ✓ ✓ ✓ ✓ ✓ ✓
5-50 μm LiNbO3 ✓ ✓ ✓ ✓
5-50 μm LiTiO3 ✓ ✓ ✓ ✓
300~900 nm Lithium Niobate Thin Films (LNOI)
Top Functional Layer
Thickness 300~900 nm Orientation X, Z
Material LiNbO3 Diameter 3, 4, 6 inch
Isolation Layer
Thickness 1000-4000 nm Material SiO2
Substrate
Material Si, Quartz, Sapphire etc. Thickness 230-1000 μm

3-6 inch, 300-900 nm

LN Thin Film

SIO2

Silicon Substrate

300~900 nm Lithium Tantalate Thin Films (LTOI)
Top Functional Layer
Thickness 300~900 nm Orientation Y-42 etc.
Material LiNbO3 Diameter 3, 4, 6 inch
Isolation Layer
Thickness 300-4000 nm Material SiO2
Substrate
Material Si, Quartz, Sapphire etc. Thickness 230-1000 μm

3-6 inch, 300-900 nm

LT Thin Film

SIO2

Silicon Substrate