FZ Wafer
Float Zone (FZ) crystal growing method is one of the first attempted approaches on Ingot growing, initially developed in the early 1960s.
FZ method is characterized by high resistivity value and low oxygen concentration, which are mandatory for high purified single crystal manufacturing.
Diameter: 100~200mm
| Specification | 100 mm | 125 mm | 150 mm | 200 mm | |
|---|---|---|---|---|---|
| Type [Dopant] | P | Boron | |||
| N | Phosphorus [P] | ||||
| Resistivity (Ω·cm) | P | 1,000 ~ 15,000 | |||
| N | |||||
| Thickness (μm) | 525±25 | 575±25 | 625±25 | 725±25 | |
| 675±25 | |||||
| TTV (μm) | Max 10 | ||||
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